Fermi level shift in La1-xSrxMO3 (M=Mn, Fe, Co, and Ni) probed by Schottky-like heteroepitaxial junctions with SrTi0.99Nb0.01O3

被引：45

作者：

Sawa, A. ^{[1
]}

Yamamoto, A.

Yamada, H.

Fujii, T.

Kawasaki, M.

Matsuno, J.

Tokura, Y.

机构：

[1] Correlated Electron Res Ctr, Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] ERATO, Japan Sci & Technol Agcy, Tsukuba, Ibaraki 3058562, Japan

[4] Univ Tokyo, Dept Appl Phys, Tokyo, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 25期

关键词：

D O I：

10.1063/1.2749431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have studied electrical properties of perovskite heteroepitaxial junctions consisting of transition metal oxides La1-xSrxMO3 (LSMO: M=Mn, Fe, Co, and Ni) and an n-type semiconductor SrTi0.99Nb0.01O3 (Nb:STO). The junctions showed rectifying current-voltage characteristics that could be analyzed by taking into account a Schottky-like barrier formed in the Nb:STO at the interfaces. As the doping level x is increased, the Schottky barrier height and built-in potential increase as similar to x (eV), indicating the downward shift of the Fermi level position in the LSMO. The Fermi level position in the LSMO with the same doping level x tends to be deepened with increasing the atomic number of M, in the order of Mn, Fe, Co, and Ni. (c) 2007 American Institute of Physics.

引用

页数：3

共 16 条

[1] Electrical properties and colossal electroresistance of heteroepitaxial SrRuO3/SrTi1-xNbxO3 (0.0002≤x≤0.02) Schottky junctions [J].

Fujii, T. ;

Kawasaki, M. ;

Sawa, A. ;

Kawazoe, Y. ;

Akoh, H. ;

Tokura, Y. .

PHYSICAL REVIEW B, 2007, 75 (16)

[2] Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3 [J].

Fujii, T ;

Kawasaki, M ;

Sawa, A ;

Akoh, H ;

Kawazoe, Y ;

Tokura, Y .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :012107-1

[3] Core-level photoemission measurements of the chemical potential shift as a probe of correlated electron systems [J].

Fujimori, A ;

Ino, A ;

Matsuno, J ;

Yoshida, T ;

Tanaka, K ;

Mizokawa, T .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2002, 124 (2-3) :127-138

[4] Dynamical mean-field theory of strongly correlated fermion systems and the limit of infinite dimensions [J].

Georges, A ;

Kotliar, G ;

Krauth, W ;

Rozenberg, MJ .

REVIEWS OF MODERN PHYSICS, 1996, 68 (01) :13-125

[5] Chemical potential shift in La1-xSrxMnO3:: Photoemission test of the phase separation scenario [J].

Matsuno, J ;

Fujimori, A ;

Takeda, Y ;

Takano, M .

EUROPHYSICS LETTERS, 2002, 59 (02) :252-257

[6] Photocarrier injection and current-voltage characteristics of La0.8Sr0.2MnO3/SrTiO3:Nb heterojunction at low temperature [J].

Muramatsu, T ;

Muraoka, Y ;

Hiroi, Z .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10) :7367-7371

[7] Photogenerated hole carrier injection to YBa2Cu3O7-x in an oxide heterostructure [J].

Muraoka, Y ;

Muramatsu, T ;

Yamaura, J ;

Hiroi, Z .

APPLIED PHYSICS LETTERS, 2004, 85 (14) :2950-2952

[8] Efficient photocarrier injection in a transition metal oxide heterostructure [J].

Muraoka, Y ;

Yamauchi, T ;

Ueda, Y ;

Hiroi, Z .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (49) :L757-L763

[9] Magnetocapacitance and exponential magnetoresistance in manganite-titanate heterojunctions [J].

Nakagawa, N ;

Asai, M ;

Mukunoki, Y ;

Susaki, T ;

Hwang, HY .

APPLIED PHYSICS LETTERS, 2005, 86 (08) :1-3

[10] Band offsets of wide-band-gap oxides and implications for future electronic devices [J].

Robertson, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1785-1791

← 1 2 →