Photogenerated hole carrier injection to YBa2Cu3O7-x in an oxide heterostructure

被引：42

作者：

Muraoka, Y ^{[1
]}

Muramatsu, T ^{[1
]}

Yamaura, J ^{[1
]}

Hiroi, Z ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 14期

关键词：

D O I：

10.1063/1.1803616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated a YBa2Cu3O7-x/SrTiO3:Nb heterostructure and measured the current-voltage and photovoltaic properties under ultraviolet light irradiation at room temperature. A large photovoltage of 0.8 V is observed and is positive to the film. The photovoltage appears under illumination of light with photon energy larger than 3.2 eV. These results indicate that photogenerated hole carriers in the SrTiO3:Nb substrate are injected to the film. The maximum surface hole density is attained to be 3.5x10(13) cm(-2) at a light power of 44 mW/cm(2). The present photocarrier injection technique could apply to many transition metal oxides to control the hole carrier density externally. (C) 2004 American Institute of Physics.

引用

页码：2950 / 2952

页数：3

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