Optimized calibration method for Fourier transform infrared phase-modulated ellipsometry

被引：12

作者：

Garcia-Caurel, E ^{[1
]}

Bertran, E ^{[1
]}

Canillas, A ^{[1
]}

机构：

[1] Univ Barcelona, FEMAN, Dept Fis Aplicada & Opt, E-08028 Barcelona, Spain

来源：

THIN SOLID FILMS | 1999年 / 354卷 / 1-2期

关键词：

ellipsometry; Fourier transform infrared spectroscopy; reflection spectroscopy; silicon oxide;

D O I：

10.1016/S0040-6090(99)00373-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new calibration method for FTIR phase-modulated ellipsometry is presented. This procedure is based on the multiple-harmonic modulation model and takes into account the effect of the multiple reflections of the beam between the modulator faces. With this procedure all the Bessel function background in the wavenumber range from 950 to 3500 cm(-1) is removed. When this is achieved, the ellipsometric angles Psi and Delta can be determined accurately using any of the standard measurement configurations. The measurement of the thickness of an amorphous silicon dioxide thin film, thermally grown on a crystalline silicon substrate, is used as a quality test of the new calibration procedure. FTIR phase-modulated ellipsometry and UV-vis phase-modulated ellipsometry results agree within 0.1%, indicating that the FTIR measurements performed with the new optimized calibration method are accurate. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：187 / 194

页数：8

共 16 条

[1] IMPROVEMENTS OF PHASE-MODULATED ELLIPSOMETRY [J].

ACHER, O ;

BIGAN, E ;

DREVILLON, B .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1989, 60 (01) :65-77

[2] PHASE-MODULATED ELLIPSOMETER USING A FOURIER-TRANSFORM INFRARED SPECTROMETER FOR REAL-TIME APPLICATIONS [J].

CANILLAS, A ;

PASCUAL, E ;

DREVILLON, B .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1993, 64 (08) :2153-2159

[3] Application of infrared Fourier transform phase-modulated ellipsometry to the characterization of silicon-based amorphous thin films [J].

Canillas, A ;

Pascual, E ;

Andujar, JL ;

Campmany, J ;

Bertran, E .

THIN SOLID FILMS, 1998, 313 :671-675

[4] AN IR PHASE-MODULATED ELLIPSOMETER USING A FOURIER-TRANSFORM SPECTROMETER FOR IN-SITU APPLICATIONS [J].

CANILLAS, A ;

PASCUAL, E ;

DREVILLON, B .

THIN SOLID FILMS, 1993, 234 (1-2) :318-322

[5]

CANILLAS A, 1996, J OPT SOC AM A, V13, P246

[6]

CAPMANY J, 1993, J OPT SOC AM A, V10, P713

[7] Spectroscopic ellipsometry in the infrared range [J].

Drevillon, B .

THIN SOLID FILMS, 1998, 313 :625-630

[8] NONDESTRUCTIVE CHARACTERIZATION OF SILICON-ON-INSULATOR STRUCTURES USING INFRARED SPECTROSCOPIC ELLIPSOMETRY [J].

FERRIEU, F ;

DUTARTRE, D .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) :5810-5813

[9] In situ infrared ellipsometry study of the growth of hydrogenated amorphous carbon thin films [J].

Heitz, T ;

Drevillon, B .

THIN SOLID FILMS, 1998, 313 :704-707

[10] AN IMPROVED METHOD FOR HIGH REFLECTIVITY ELLIPSOMETRY BASED ON A NEW POLARIZATION MODULATION TECHNIQUE [J].

JASPERSON, SN ;

SCHNATTERLY, SE .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1969, 40 (06) :761-+

← 1 2 →