NONDESTRUCTIVE CHARACTERIZATION OF SILICON-ON-INSULATOR STRUCTURES USING INFRARED SPECTROSCOPIC ELLIPSOMETRY

被引：5

作者：

FERRIEU, F

DUTARTRE, D

机构：

[1] Centre National d' Études des Télécommunications, 38243 Meylan

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.346952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nondestructive characterization of a large variety of silicon-on-insulator structures has been performed by infrared spectroscopic ellipsometry (IRSE). This technique is shown to be applicable over very wide ranges of Si and SiO2 thicknesses and thus is more adapted than visible reflectometry or spectroscopic ellipsometry when relatively thick films are analyzed. In addition, IRSE provides information on any possible interface roughness and thickness homogeneity of the layers.

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页码：5810 / 5813

页数：4

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