NEW CAPPING TECHNIQUE FOR ZONE-MELTING RECRYSTALLIZATION OF SILICON-ON-INSULATOR FILMS

被引：17

作者：

CHEN, CK

GEIS, MW

FINN, MC

TSAUR, BY

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 19期

关键词：

D O I：

10.1063/1.96959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1300 / 1302

页数：3

共 15 条

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[4]

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[5] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J].

FAN, JCC ;

GEIS, MW ;

TSAUR, BY .

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[6] ZONE-MELTING RECRYSTALLIZATION OF SI FILMS WITH A MOVEABLE-STRIP-HEATER OVEN [J].

GEIS, MW ;

SMITH, HI ;

TSAUR, BY ;

FAN, JCC ;

SILVERSMITH, DJ ;

MOUNTAIN, RW .

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[7]

GEIS MW, 1985, UNPUB DEC P S C MAT

[8]

GEIS MW, 1985, MATERIAL RES SOC S P, V35, P575

[9]

GIBSON JM, 1985, UNPUB DEC P S C MAT

[10] TIME-DEPENDENT COMPOSITIONAL VARIATION IN SIO2-FILMS NITRIDED IN AMMONIA [J].

HAN, CJ ;

MOSLEHI, MM ;

HELMS, CR ;

SARASWAT, KC .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :641-643

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