Application of infrared Fourier transform phase-modulated ellipsometry to the characterization of silicon-based amorphous thin films

被引：2

作者：

Canillas, A ^{[1
]}

Pascual, E ^{[1
]}

Andujar, JL ^{[1
]}

Campmany, J ^{[1
]}

Bertran, E ^{[1
]}

机构：

[1] Univ Barcelona, Dept Fis Aplicada & Elect, E-08028 Barcelona, Spain

来源：

THIN SOLID FILMS | 1998年 / 313卷

关键词：

ellipsometry; infrared spectroscopy; amorphous silicon; silicon dioxide; optical properties; structural properties;

D O I：

10.1016/S0040-6090(97)00975-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Multilayers of silicon-based amorphous thin films were characterized to test the performance of Fourier transform phase-modulated ellipsometry (FTPME) in absolute measurements (thickness and refractive index). The multilayers consist of a stack of silicon dioxide (SiO2), hydrogenated amorphous silicon (a-Si:H) and NiCr thin films on c-Si substrates. Results provided by FTPME are compared with those from UV-visible phase-modulated ellipsometry and transmission electron microscopy. The thicknesses of the layers determined by the three techniques agrees within 3%. Similar volume void fractions of approximately 8% for the silicon dioxide layers are found by UV-visible and IR ellipsometry. (C) 1998 Elsevier Science S.A.

引用

页码：671 / 675

页数：5

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