Transparent oxide optoelectronics

被引：315

作者：

Ohta, Hiromichi ^{[1
]}

Hosono, Hideo ^{[1
,2
]}

机构：

[1] Japan Sci & Technol Agcy, ERATO, Hosono Transparent ElectroAct Mat Project, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

MATERIALS TODAY | 2004年 / 7卷 / 06期

基金：

日本科学技术振兴机构;

关键词：

D O I：

10.1016/S1369-7021(04)00288-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article reviews transparent oxide optoelectronic devices based on our efforts focusing on transparent thin-film transistors fabricated from single-crystalline films of InGaO3(ZnO)(5) with a natural superlattice structure, near-ultraviolet (UV) emitting diodes composed of heteroepitaxially grown p-type SrCu2O2 and n-type ZnO, and single-crystalline NiO and ZnO pn-heterojunction diode UV detectors.

引用

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页码：42 / 51

页数：10

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