Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes

We report on the band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes with varying widths and barrier thicknesses of the quantum wells. In these devices, we observe that the stimulated emission peak wavelength shifts to shorter values with decreasing well thickness. From the comparison of the results of the quantum mechanical calculations of the subbands energies with the measured data, we estimate the effective conduction- and valence-band discontinuities at the GaN-In0.13Ga0.87N heterointerface to be approximately 130-155 and 245-220 meV, respectively. We also discuss the effect of stress on the estimated values of band discontinuities. (C) 1997 American Institute of Physics.