Transport and drag in undoped electron-hole bilayers

被引：18

作者：

Hwang, E. H. ^{[1
]}

Das Sarma, S. ^{[1
]}

机构：

[1] Univ Maryland, Condensed Matter Theory Ctr, Dept Phys, College Pk, MD 20742 USA

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.78.075430

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double quantum well systems. Our results indicate that the background charged impurity scattering is the most dominant resistive scattering mechanism in the high-mobility bilayers. We also find that the drag transresistivity is significantly enhanced when the electron-hole layer separation is small due to the exchange induced renormalization of the single layer compressibility. However, the Fermi-liquid many-body approach cannot explain the recently observed upturn in the drag resistance with the lowering of temperature, which may be indicating the emergence of an apparent non-Fermi-liquid excitonic phase in closely spaced bilayers.

引用

页数：6

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