Self-assembled patterning of ultrathin silicides by local oxidation

The self-assembled patterning method based on local oxidation is fast, independent of wafer size, and suitable for high throughput. Patterning is achieved by controlling the diffusion reactions in ultrathin films with the application of stress fields. The processes involved are standard silicon processing, except for the growth of the single crystalline silicide layer. The thermal budget is similar to that needed for dopant activation in silicon processing.