Ruthenium and sulphide passivation of GaAs

被引：12

作者：

Ali, ST ^{[1
]}

Ghosh, S ^{[1
]}

Bose, DN ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,CTR MAT SCI,SEMICOND DIV,KHARAGPUR 721302,W BENGAL,INDIA

来源：

APPLIED SURFACE SCIENCE | 1996年 / 93卷 / 01期

关键词：

D O I：

10.1016/0169-4332(95)00193-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effectiveness of chemical surface treatment of GaAs using (NH4)(2)S-x, Na2S and RuCl3 has been studied through X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), spectral response and barrier height measurements. XPS studies show that the improved surface quality is due to removal of native oxides and formation of bonds with S in the case of(NH4)(2)S-x and Na2S and Ru in the case of RuCl3. It was found that Ga-S or Ga-Ru and As-S or As-Ru bonds were formed with sulphide and ruthenium treatments, respectively. The PL intensity increased by 70-90% with modification in all cases. The minority carrier diffusion length L(p) increased from 0.54 to 0.70 mu m due to reduction of the surface recombination velocity S-r from 5.0 X 10(5) to 2.1 X 10(5) cm s(-1). The Au/GaAs Schottky barrier height also increased from 0.80 to 0.92 eV for RuCl3, and (NH4)(2)S-x passivated samples.

引用

页码：37 / 43

页数：7

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