RUTHENIUM-INDUCED SURFACE-STATES ON N-GAAS SURFACES

被引：23

作者：

LUDWIG, M ^{[1
]}

HEYMANN, G ^{[1
]}

JANIETZ, P ^{[1
]}

机构：

[1] HUMBOLDT UNIV,DEPT CHEM,DDR-1040 BERLIN,GER DEM REP

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期

关键词：

D O I：

10.1116/1.583407

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：485 / 492

页数：8

相关论文

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