Symmetric and Asymmetric Double Gate MOSFET Modeling

被引：17

作者：

Abebe, H. ^{[1
]}

Cumberbatch, E. ^{[2
]}

Morris, H. ^{[2
]}

Tyree, V. ^{[1
]}

Numata, T. ^{[3
]}

Uno, S. ^{[3
]}

机构：

[1] USC Viterbi Sch Engn, Inst Informat Sci, MOSIS Serv, Marina Del Rey, CA 90292 USA

[2] Claremont Grad Univ, Sch Math Sci, Claremont, CA 91711 USA

[3] Nagoya Univ, Dept Elect & Comp Engn, Aichi, Japan

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2009年 / 9卷 / 04期

关键词：

Device modeling; compact model; D G- MOSFET; circuit simulation;

D O I：

10.5573/JSTS.2009.9.4.225

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical compact model for the asymmetric lightly doped Double Gate (DC) MOSFET is presented. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation. Compact models of the net charge and channel current of the DG-MOSFET are derived in section 2. Results for the channel potential and current are compared with 2-D numerical data for a lightly doped DG MOSFET in section 3, showing very good agreement.

引用

页码：225 / 232

页数：8

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