A novel scaling-parameter-dependent subthreshold swing model for double-gate (DG) SOI MOSFETs: including effective conducting path effect (ECPE)

被引：22

作者：

Chiang, TK ^{[1
]}

机构：

[1] So Taiwan Univ Technol, Dept Elect Engn, Tainan, Taiwan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 12期

关键词：

D O I：

10.1088/0268-1242/19/12/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a novel scaling-parameter-dependent subthreshold swing model. By considering the effective conducting path effect (ECPE), this model generalizes the previous subthreshold swing model and precisely predicts the subthreshold swing for DG SOI MOSFETs without considering quantum effects. The model shows that the subthreshold swing could depend only on a scaling device parameter (alpha(3)). The calculated subthreshold swing S matches well with the simulated results by MEDICI. Our model is simple and offers an efficient scaling rule for DG SOI MOSFETs.

引用

页码：1386 / 1390

页数：5

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