Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors

被引：59

作者：

Di Bartolomeo, A. ^{[1
,2
]}

Santandrea, S. ^{[1
,2
]}

Giubileo, F. ^{[1
,2
,3
]}

Romeo, F. ^{[1
,2
,3
]}

Petrosino, M. ^{[4
]}

Citro, R. ^{[1
,2
,3
]}

Barbara, P. ^{[5
]}

Lupina, G. ^{[6
]}

Schroeder, T. ^{[6
]}

Rubino, A.

机构：

[1] Univ Salerno, Dipartimento Fis ER Caianiello, I-84084 Fisciano, SA, Italy

[2] Univ Salerno, Ctr Interdipartimentale NANO MATES, I-84084 Fisciano, SA, Italy

[3] Univ Salerno, Dipartimento Fis, CNR, SPIN Salerno, I-84084 Fisciano, SA, Italy

[4] Univ Salerno, Dipartimento Ingn Ind, I-84084 Fisciano, SA, Italy

[5] Georgetown Univ, Dept Phys, Washington, DC 20057 USA

[6] IHP, D-15236 Frankfurt, Oder, Germany

来源：

关键词：

Graphene; Field-effect transistor; Specific contact resistivity; Transfer characteristic; Double dip;

D O I：

10.1016/j.diamond.2013.06.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of similar to 7 k Omega mu m(2) and similar to 30k Omega mu m(2) for Ni and Ti, respectively. We show that the contact resistance is a significant contributor to the total source-to-drain resistance and it is modulated by the back-gate voltage. We measure transfer characteristics showing a double dip feature that we explain as the effect of doping due to charge transfer from the contacts causing minimum density of states for graphene under the contacts and in the channel at different gate voltage. (c) 2013 Elsevier B.V. All rights reserved.

引用

页码：19 / 23

页数：5

共 28 条

[1] Spin-resolved scattering through spin-orbit nanostructures in graphene [J].