Record Endurance for Single-Walled Carbon Nanotube-Based Memory Cell

被引：48

作者：

Di Bartolomeo, A. ^{[1
,2
]}

Yang, Y. ^{[3
]}

Rinzan, M. B. M. ^{[3
]}

Boyd, A. K. ^{[3
]}

Barbara, P. ^{[3
]}

机构：

[1] Univ Salerno, Dipartimento Fis ER Caianiello, I-84084 Fisciano, Sa, Italy

[2] Univ Salerno, Interdipartimentale Ric NANOMATES, I-84084 Fisciano, Sa, Italy

[3] Georgetown Univ, Dept Phys, Washington, DC 20057 USA

来源：

NANOSCALE RESEARCH LETTERS | 2010年 / 5卷 / 11期

关键词：

Carbon nanotube; Field-effect transistor; Memory; Hysteresis; Endurance; Data retention; FABRICATION; HYSTERESIS; DEVICES;

D O I：

10.1007/s11671-010-9727-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO2/nanotube interface. We show that this type of memory device is robust, withstanding over 10(5) operating cycles, with a current drive capability up to 10(-6) A at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We find that the device performance depends on temperature and pressure, while both endurance and data retention are improved in vacuum.

引用

收藏

页码：1852 / 1855

页数：4

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