A single-poly EEPROM cell for embedded memory applications

被引：37

作者：

Di Bartolomeo, A. ^{[1
,2
,3
]}

Ruecker, H. ^{[1
]}

Schley, P. ^{[1
]}

Fox, A. ^{[1
]}

Lischke, S. ^{[1
]}

Na, Kee-Yeol ^{[1
,4
]}

机构：

[1] IHP Microelect, D-15236 Frankfurt, Oder, Germany

[2] Univ Salerno, Dipartimento Fis, ER Caianiello & INFN, Grp Coll Salerno, I-84081 Baronissi, Italy

[3] Univ Salerno, Ctr Interdipartimentale Ric NANO MATES, I-84081 Baronissi, Italy

[4] Chungbuk Prov Coll, Okcheon Goon 373807, Chungbuk, South Korea

来源：

SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 06期

关键词：

Non-volatile memory; Flash memory; EEPROM; Single-poly-silicon; Fowler-Nordheim tunnelling; Reliability; Endurance; Data retention;

D O I：

10.1016/j.sse.2009.04.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a novel single-poly-silicon EEPROM cell for embedded memory. The cell is integrated in a 0.13 mu m RF-CMOS technology without process modifications and is composed of an NMOS transistor and a MOS capacitor on two isolated P-wells sharing a floating poly-silicon layer. A two-polarity voltage of +/- 6 V is applied for writing and erasing using uniform-channel Fowler-Nordheim tunnelling. Operations faster than 1 ms, endurance over 10(+3) cycles and data retention longer than 10 years are demonstrated. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：644 / 648

页数：5

共 22 条

[1] Extended data retention process technology for highly reliable flash EEPROMs of 106 to 107 W/E cycles [J].