What we have learned on Flash memory reliability in the last ten years

被引：12

作者：

Cappelletti, P ^{[1
]}

Bez, R ^{[1
]}

Modelli, A ^{[1
]}

Visconti, A ^{[1
]}

机构：

[1] STMicroelect, Cent R&D, I-20041 Agrate Brianza, Italy

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419196

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we report the most important progresses on Flash memory reliability in the last decade. The capability of mastering the degradation mechanisms, mainly related to the generation of localized defects in the tunnel oxide during writing operations, comes from the large know-how developed in more that 20 years of research and industrial activity.

引用

页码：489 / 492

页数：4

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