Morphology and growth kinetics of organic thin films deposited by hot wall epitaxy on KCl substrates

被引:15
作者
Andreev, A. [1 ]
Haber, T. [2 ]
Smilgies, D. -M. [3 ]
Resel, R. [2 ]
Sitter, H. [1 ]
Sariciftci, N. S. [4 ]
Valek, L. [5 ]
机构
[1] Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria
[2] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria
[3] Cornell Univ, CHESS G Line, Ithaca, NY 14853 USA
[4] Univ Linz, Linz Inst Organ Solar Cells LIOS, A-4040 Linz, Austria
[5] Brno Univ Technol, Inst Engn Phys, Brno, Czech Republic
关键词
Atomic force microscopy; Nanostructures; X-ray diffraction; Hot wall epitaxy; Organic compounds;
D O I
10.1016/j.jcrysgro.2004.11.263
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In this work we use atomic force microscopy and X-ray diffraction to study morphology and growth kinetics of para-sexiphenyl layers deposited by hot wall epitaxy on crystalline KCl(001) substrates. It is shown that the growth on KCl(001) is characterized by co-existence of long needles ("laying" molecules) and terraces structured islands ("standing" molecules). The former are the initial growth stage of the films, generating a rectangular network in accordance with surface symmetry of the substrate. It is in contrast to mica substrates, where para-sexiphenyl forms only needles with one preferential direction. (C) 2004 Elsevier B. V. All rights reserved.
引用
收藏
页码:E2037 / E2042
页数:6
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