High hole concentration of p-type InGaN epitaxial layers grown by MOCVD

被引：21

作者：

Chen, PC

Chen, CH

Chang, SJ ^{[1
]}

Su, YK

Chang, PC

Huang, BR

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 830, Taiwan

[4] Natl Yunlin Univ Sci & Technol, Inst Elect Engn, Yunlin, Taiwan

来源：

THIN SOLID FILMS | 2006年 / 498卷 / 1-2期

关键词：

InGaN; MOCVD; PL; tunneling contact layer; LED; hole concentration; operating voltage;

D O I：

10.1016/j.tsf.2005.07.084

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical and optical properties of Mg-doped InxGa1-xN were investigated herein. With an In mole fraction increase, the RT carrier concentration was increased exponentially. Compared to Mg-doped GaN layers, it was found that we could achieve a high (1.65 x 10(19) cm(-3)) hole concentration from the p-type InGaN with an indium content of 0.23. InGaN/GaN MQW blue LEDs without and with a 5-nm-thick p-type In0.23Ga0.77N contact layer were also successfully fabricated. We could reduce the 20 mA operation voltage from 3.78 V to 3.37 V by introducing a 5-nm-thick In0.23Ga0.77N layer on top of the p-type GaN layer and improve the blue LED EL intensity and output power by employing such a p-In0.23Ga0.77N layer. (c) 2005 Elsevier B.V. All rights reserved.

引用

收藏

页码：113 / 117

页数：5

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