Kinetic growth instabilities on vicinal Si(001) surfaces

被引：86

作者：

Schelling, C ^{[1
]}

Springholz, G ^{[1
]}

Schäffler, F ^{[1
]}

机构：

[1] Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.83.995

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report new types of kinetic growth instabilities during silicon homoepitaxy on vicinal Si(001) surfaces with miscut angles less than or equal to 2 degrees. They occur under frequently employed growth conditions in an extensively studied material system. The characteristic features are (i) kinetic step bunching at low growth temperatures, (ii) a macroscopic zigzag morphology of [110] segments at intermediate temperatures, and (iii) a smooth, noncorrelated morphology at high growth temperatures and after annealing. A qualitative model is discussed that relates the morphological features with the kinetics of step incorporation and diffusion in connection with a symmetry-breaking miscut.

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页码：995 / 998

页数：4

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