Characteristics and reliability of high-power InGaAs AlGaAs laser diodes with decoupled confinement heterostructure

被引:9
作者
Yamada, Y [1 ]
Okubo, A [1 ]
Oeda, Y [1 ]
Yamada, Y [1 ]
Fujimoto, T [1 ]
Muro, K [1 ]
机构
[1] Mitsui Chem Inc, Elect & Informat Mat Lab, Sodegaura, Chiba 29902565, Japan
来源
TESTING, PACKAGING, RELIABILITY, AND APPLICATIONS OF SEMICONDUCTOR LASERS IV | 1999年 / 3626卷
关键词
high-power laser diodes; catastrophic optical damage(COD); InGaAs AlGaAs laser; decoupled confinement heterostructure(DCH);
D O I
10.1117/12.345434
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In order to overcome catastrophic optical damage(COD), decoupled confinement heterostructure(DCH) featuring a broadened waveguide and thin carrier block layers have been developed. Due to decoupling of carrier and optical confinement a DCH laser can be designed more flexibly than a conventional separated confinement heterostructure (SCH) laser, i.e., laser diodes can be designed with a variety of gain coupling factor Gamma(perpendicular to), quantum-well number N-w, keeping the beam divergence angle constant. COD level of various DCH lasers with uncoated facet was examined in 50 mu sec pulse operation and following results were obtained; COD was normalized by equivalent vertical beam width d/Gamma (perpendicular to) (where d is thickness of quantum-well) and COD level of 980nm InGaAs quantum-well lasers was twice as high as that of 860nm GaAs quantum-well lasers, i.e., 100-110mW/mu m for InGaAs-QW and 40-50mW/mu m for GaAs-QW in the case of d/Gamma (perpendicular to) similar to 1. So, COD level can be manage in DCH scheme. Epitaxial structure has been optimized through the high-power performance of gain guided multi-mode lasers. The CW maximum power 6.3W was attained for 50 mu m aperture and 9.5W for 100 mu m aperture, which was limited by thermal saturation. Lifetest was carried out for 50 mu m aperture devices at the condition of 50 degrees C-1.0W. All 14 devices were operating over 13,000hrs without failure. The median life was estimated to be more than one hundred thousand hours at 50 degrees C. Real index guided structure was fabricated with a multi-step MOVPE epitaxial growth. Stable fabrication could be possible even in a conventional process, since chemically active Al-content was greatly reduced at 980nm in DCH. The maximum CW output power was 1.3W, which was limited by thermal saturation. Single mode operation was extended up to 700mW. And 500mW kink-free output was reproducibly obtained in a self-aligned real index guide structure. Preliminary life tests showed the stable operation at 300mW-50 degrees C and 300mW-70 degrees C.
引用
收藏
页码:231 / 239
页数:9
相关论文
共 9 条
[1]   Characteristics and reliability of high-power GaAs/AlGaAs laser diodes with decoupled confinement heterostructure [J].
Fujimoto, T ;
Yamada, Y ;
Oeda, Y ;
Okubo, A ;
Yamada, Y ;
Muro, K .
FABRICATION, TESTING, AND RELIABILITY OF SEMICONDUCTOR LASERS III, 1998, 3285 :80-87
[2]   DEGRADATION BEHAVIOR OF 0.98-MU-M STRAINED-QUANTUM-WELL INGAAS/ALGAAS LASERS UNDER HIGH-POWER OPERATION [J].
FUKUDA, M ;
OKAYASU, M ;
TEMMYO, J ;
NAKANO, J .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) :471-476
[3]   LOW-NOISE ERBIUM-DOPED FIBER AMPLIFIER OPERATING AT 1.54-MU-M [J].
MEARS, RJ ;
REEKIE, L ;
JAUNCEY, IM ;
PAYNE, DN .
ELECTRONICS LETTERS, 1987, 23 (19) :1026-1028
[4]   THERMODYNAMICS OF FACET DAMAGE IN CLEAVED ALGAAS LASERS [J].
MOSER, A .
APPLIED PHYSICS LETTERS, 1991, 59 (05) :522-524
[5]   HIGH-POWER OPERATION OF STRAINED INGAAS ALGAAS SINGLE QUANTUM-WELL LASERS [J].
MOSER, A ;
OOSENBRUG, A ;
LATTA, EE ;
FORSTER, T ;
GASSER, M .
APPLIED PHYSICS LETTERS, 1991, 59 (21) :2642-2644
[6]   ARRHENIUS PARAMETERS FOR THE RATE-PROCESS LEADING TO CATASTROPHIC DAMAGE OF ALGAAS-GAAS LASER FACETS [J].
MOSER, A ;
LATTA, EE .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (10) :4848-4853
[7]   1.48-MU-M HIGH-POWER GAINASP-INP GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE MULTIPLE-QUANTUM-WELL LASER-DIODES [J].
NAMEGAYA, T ;
KATSUMI, R ;
IWAI, N ;
NAMIKI, S ;
KASUKAWA, A ;
HIRATANI, Y ;
KIKUTA, T .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1924-1931
[8]   DESIGN OF HIGH-POWER STRAINED INGAAS/ALGAAS QUANTUM-WELL LASERS WITH A VERTICAL DIVERGENCE ANGLE OF 18-DEGREES [J].
TEMMYO, J ;
SUGO, M .
ELECTRONICS LETTERS, 1995, 31 (08) :642-644
[9]  
Yamada M., 1986, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE69, P948