Graphene applications in electronics and photonics

被引:211
作者
Avouris, Phaedon [1 ]
Xia, Fengnian [1 ]
机构
[1] IBM Corp, Watson Res Ctr, Armonk, NY 10504 USA
关键词
LAYER GRAPHENE; HIGH-FREQUENCY; LARGE-AREA; INFRARED-SPECTROSCOPY; HIGH-QUALITY; TRANSISTORS; TRANSPORT; FILMS; GRAPHITIZATION; PLASMONICS;
D O I
10.1557/mrs.2012.206
中图分类号
T [工业技术];
学科分类号
120111 [工业工程];
摘要
Graphene is a material with outstanding properties that make it an excellent candidate for advanced applications in future electronics and photonics. The potential of graphene in high-speed analog electronics is currently being explored extensively because of its high carrier mobility, its high carrier saturation velocity, and the insensitivity of its electrical-transport behavior to temperature variations. Herein, we review some of the key material and carrier-transport physics of graphene, then focus on high-frequency graphene field-effect transistors, and finally discuss graphene monolithically integrated circuits (ICs). These high-frequency graphene transistors and ICs could become essential elements in the blossoming fields of wireless communications, sensing, and imaging. After discussing graphene electronics, we describe the impressive photonic properties of graphene. Graphene interacts strongly with light over a very wide spectral range from microwaves to ultraviolet radiation. Most importantly, the light-graphene interaction can be adjusted using an electric field or chemical dopant, making graphene-based photonic devices tunable. Single-particle interband transitions lead to a universal optical absorption of about 2% per layer, whereas intraband free-carrier transitions dominate in the microwave and terahertz wavelength range. The tunable plasmonic absorption of patterned graphene adds yet another dimension to graphene photonics. We show that these unique photonic properties of graphene over a broad wavelength range make it promising for many photonic applications such as fast photodetectors, optical modulators, far-infrared filters, polarizers, and electromagnetic wave shields. These graphene photonic devices could find various applications in optical communications, infrared imaging, and national security.
引用
收藏
页码:1225 / 1234
页数:10
相关论文
共 88 条
[1]
A self-consistent theory for graphene transport [J].
Adam, Shaffique ;
Hwang, E. H. ;
Galitski, V. M. ;
Das Sarma, S. .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2007, 104 (47) :18392-18397
[2]
Screening effect and impurity scattering in monolayer graphene [J].
Ando, Tsuneya .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2006, 75 (07)
[3]
Graphene: synthesis and applications [J].
Avouris, Phaedon ;
Dimitrakopoulos, Christos .
MATERIALS TODAY, 2012, 15 (03) :86-97
[4]
GRAPHITIZATION OF ALPHA-SILICON CARBIDE [J].
BADAMI, DV .
NATURE, 1962, 193 (4815) :569-&
[5]
Balandin AA, 2011, NAT MATER, V10, P569, DOI [10.1038/nmat3064, 10.1038/NMAT3064]
[6]
Atomic-Layer Graphene as a Saturable Absorber for Ultrafast Pulsed Lasers [J].
Bao, Qiaoliang ;
Zhang, Han ;
Wang, Yu ;
Ni, Zhenhua ;
Yan, Yongli ;
Shen, Ze Xiang ;
Loh, Kian Ping ;
Tang, Ding Yuan .
ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (19) :3077-3083
[7]
Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].
Berger, C ;
Song, ZM ;
Li, TB ;
Li, XB ;
Ogbazghi, AY ;
Feng, R ;
Dai, ZT ;
Marchenkov, AN ;
Conrad, EH ;
First, PN ;
de Heer, WA .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916
[8]
Electronic Cooling in Graphene [J].
Bistritzer, R. ;
MacDonald, A. H. .
PHYSICAL REVIEW LETTERS, 2009, 102 (20)
[9]
Ultrahigh electron mobility in suspended graphene [J].
Bolotin, K. I. ;
Sikes, K. J. ;
Jiang, Z. ;
Klima, M. ;
Fudenberg, G. ;
Hone, J. ;
Kim, P. ;
Stormer, H. L. .
SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355
[10]
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [J].
Britnell, L. ;
Gorbachev, R. V. ;
Jalil, R. ;
Belle, B. D. ;
Schedin, F. ;
Mishchenko, A. ;
Georgiou, T. ;
Katsnelson, M. I. ;
Eaves, L. ;
Morozov, S. V. ;
Peres, N. M. R. ;
Leist, J. ;
Geim, A. K. ;
Novoselov, K. S. ;
Ponomarenko, L. A. .
SCIENCE, 2012, 335 (6071) :947-950