Graphene Oxide as a Practical Solution to High Sensitivity Gas Sensing

被引:177
作者
Prezioso, Stefano [1 ]
Perrozzi, Francesco [1 ]
Giancaterini, Luca [2 ]
Cantalini, Carlo [2 ]
Treossi, Emanuele [4 ]
Palermo, Vincenzo [3 ]
Nardone, Michele [1 ]
Santucci, Sandro [5 ]
Ottaviano, Luca [1 ]
机构
[1] Univ Aquila, Dipartimento Sci Fis & Chim, I-67100 Laquila, Italy
[2] Univ Aquila, Dipartimento Ingn Ind & Informaz & Econ, I-67100 Laquila, Italy
[3] CNR, ISOF, I-40129 Bologna, Italy
[4] Lab MIST ER, I-40129 Bologna, Italy
[5] Univ Aquila, Dipartimento Sci Fis & Chim, Gc LNGS INFN, I-67100 Laquila, Italy
关键词
NO2; SENSORS; ENHANCEMENT; TRANSISTORS; REDUCTION; CONTRAST; FILMS; CO;
D O I
10.1021/jp3085759
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Graphene and its related materials have attracted much interest in sensing applications because of their optimized ratio between active surface and bulk volume. In particular, several forms of oxidized graphene have been studied to optimize the sensing efficiency, sometimes moving away from practical solutions to boost performance. In this paper, we propose a practical, high-sensitivity, and easy to fabricate gas sensor based on high quality graphene oxide (GO), and we give the rationale to the high performance of the device. The device is fabricated by drop-casting water-dispersed single-layer GO flakes on standard 30 mu m spaced interdigitated Pt electrodes. The exceptional size of the GO flakes (27 mu m mean size and similar to 500 mu m maximum size) allows single GO flake to bridge electrodes. A typical p-type response is observed by testing the device in both reducing and oxidizing environments. The specific response to NO2 is studied by varying the operating temperature and the gas concentration. Sensing activity is demonstrated to be mainly mediated by the oxygen functional groups. A 20 ppb detection limit is measured. Besides illustrating a simple and efficient approach to gas sensing, this work is an example of the versatility of graphene oxide, accomplishing tasks that are complementary to graphene. adjacent
引用
收藏
页码:10683 / 10690
页数:8
相关论文
共 59 条
[1]   Solution-Gated Epitaxial Graphene as pH Sensor [J].
Ang, Priscilla Kailian ;
Chen, Wei ;
Wee, Andrew Thye Shen ;
Loh, Kian Ping .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2008, 130 (44) :14392-+
[2]   Enhancement of CO detection in Al doped graphene [J].
Ao, Z. M. ;
Yang, J. ;
Li, S. ;
Jiang, Q. .
CHEMICAL PHYSICS LETTERS, 2008, 461 (4-6) :276-279
[3]   Graphene nano-ribbon electronics [J].
Chen, Zhihong ;
Lin, Yu-Ming ;
Rooks, Michael J. ;
Avouris, Phaedon .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 40 (02) :228-232
[4]   Optical Turn-On Sensor Based on Graphene Oxide for Selective Detection of D-Glucosamine [J].
Cheng, Rumei ;
Liu, Yong ;
Ou, Shengju ;
Pan, Yaqiong ;
Zhang, Shu ;
Chen, Hao ;
Dai, Liming ;
Qu, Jia .
ANALYTICAL CHEMISTRY, 2012, 84 (13) :5641-5644
[5]   Adsorption of formaldehyde molecule on the intrinsic and Al-doped graphene: A first principle study [J].
Chi, Mei ;
Zhao, Ya-Pu .
COMPUTATIONAL MATERIALS SCIENCE, 2009, 46 (04) :1085-1090
[6]   Highly sensitive NO2 gas sensor based on ozone treated graphene [J].
Chung, Min Gyun ;
Kim, Dai Hong ;
Lee, Hyun Myoung ;
Kim, Taewoo ;
Choi, Jong Ho ;
Seo, Dong Kyun ;
Yoo, Ji-Beom ;
Hong, Seong-Hyeon ;
Kang, Tae June ;
Kim, Yong Hyup .
SENSORS AND ACTUATORS B-CHEMICAL, 2012, 166 :172-176
[7]   Strong Charge-Transfer Doping of 1 to 10 Layer Graphene by NO2 [J].
Crowther, Andrew C. ;
Ghassaei, Amanda ;
Jung, Naeyoung ;
Brus, Louis E. .
ACS NANO, 2012, 6 (02) :1865-1875
[8]   Rapid identification of graphene flakes: alumina does it better [J].
De Marco, P. ;
Nardone, M. ;
Del Vitto, A. ;
Alessandri, M. ;
Santucci, S. ;
Ottaviano, L. .
NANOTECHNOLOGY, 2010, 21 (25)
[9]   Reduced Graphene Oxide Conjugated Cu2O Nanowire Mesocrystals for High-Performance NO2 Gas Sensor [J].
Deng, Suzi ;
Tjoa, Verawati ;
Fan, Hai Ming ;
Tan, Hui Ru ;
Sayle, Dean C. ;
Olivo, Malini ;
Mhaisalkar, Subodh ;
Wei, Jun ;
Sow, Chorng Haur .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2012, 134 (10) :4905-4917
[10]   Layer-by-Layer Removal of Graphene for Device Patterning [J].
Dimiev, Ayrat ;
Kosynkin, Dmitry V. ;
Sinitskii, Alexander ;
Slesarev, Alexander ;
Sun, Zhengzong ;
Tour, James M. .
SCIENCE, 2011, 331 (6021) :1168-1172