In situ measurements of interface states at silicon surfaces in fluoride solutions

被引：47

作者：

Oskam, G

Hoffmann, PM

Searson, PC

机构：

[1] Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.76.1521

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The energetics and kinetics of processes involving interface states at silicon (111) surfaces in aqueous fluoride solutions were determined using in situ impedance spectroscopy. In the dark, we observe electrically active surface states with densities in the range 2 X 10(10) to 1 X 10(12) cm(-2) dependent on the surface chemistry. The surface states are physically the same, independent of pH, with a capture cross section of 1 X 10(-16) cm(2). Measurements under illumination show that recombination occurs at different interface states than those observed in the dark.

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页码：1521 / 1524

页数：4

相关论文

共 18 条

[1] ATOMIC SCALE CONVERSION OF CLEAN SI(111)-H-1X1 TO SI(111)-2X1 BY ELECTRON-STIMULATED DESORPTION [J].

BECKER, RS ;

HIGASHI, GS ;

CHABAL, YJ ;

BECKER, AJ .

PHYSICAL REVIEW LETTERS, 1990, 65 (15) :1917-1920

[2] STEP-FLOW MECHANISM VERSUS PIT CORROSION - SCANNING-TUNNELING MICROSCOPY OBSERVATIONS ON WET ETCHING OF SI(111) BY HF SOLUTIONS [J].

HESSEL, HE ;

FELTZ, A ;

REITER, M ;

MEMMERT, U ;

BEHM, RJ .

CHEMICAL PHYSICS LETTERS, 1991, 186 (2-3) :275-280

[3] COMPARISON OF SI(111) SURFACES PREPARED USING AQUEOUS-SOLUTIONS OF NH4F VERSUS HF [J].

HIGASHI, GS ;

BECKER, RS ;

CHABAL, YJ ;

BECKER, AJ .

APPLIED PHYSICS LETTERS, 1991, 58 (15) :1656-1658

[4]

HIGASHI GS, 1994, HDB SEMICONDUCTOR WA, P433

[5] KINETIC-MODEL OF THE CHEMICAL ETCHING OF SI(111) SURFACES BY BUFFERED HF SOLUTIONS [J].

JAKOB, P ;

CHABAL, YJ ;

RAGHAVACHARI, K ;

BECKER, RS ;

BECKER, AJ .

SURFACE SCIENCE, 1992, 275 (03) :407-413

[6] STUDY OF DISSOLUTION OF SIO2 IN ACIDIC FLUORIDE SOLUTIONS [J].

JUDGE, JS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1772-&

[7]

KERN W, 1970, RCA REV, V31, P187

[8] THE INFLUENCE OF SURFACE OXIDE-FILMS ON THE STABILIZATION OF N-SI PHOTOELECTRODE [J].

LOO, BH ;

FRESE, KW ;

MORRISON, SR .

SURFACE SCIENCE, 1981, 109 (01) :75-81

[9] DIRECT OBSERVATION OF SIH3 ON A 1-PERCENT-HF-TREATED SI(111) SURFACE BY SCANNING TUNNELING MICROSCOPY [J].

MORITA, Y ;

MIKI, K ;

TOKUMOTO, H .

APPLIED PHYSICS LETTERS, 1991, 59 (11) :1347-1349

[10] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

NICOLLIA.EH ;

GOETZBER.A .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+