Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors

被引：1

作者：

Cheong, Woo-Seok ^{[1
]}

Hwang, Chi-Sun ^{[1
]}

Shin, Jae-Heon ^{[1
]}

Park, Sang-Hee Ko ^{[1
]}

Yoon, Sung-Min ^{[1
]}

Cho, Doo-Hee ^{[1
]}

Ryu, Minki ^{[1
]}

Byun, Chun-Won ^{[1
]}

Yang, Shinhyuk ^{[1
]}

Chu, Hye Yong ^{[1
]}

Cho, Kyoung Ik ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Transparent Elect Team, Taejon 305350, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 54卷 / 01期

关键词：

IPVD; Ionized physical vapor deposition; Silicon oxide; Transparent thin-film transistor;

D O I：

10.3938/jkps.54.473

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using an ionized physical vapor deposition (IPVD) apparatus, we formed a low-temperature silicon-oxide gate insulator (GI) for top-gate-type In-Ga-Zn oxide channel transparent thin-film transistors (IGZO-TTFTs) for the first time. IGZO-TTFTs with SiOx GIs (100 nm) showed a low gate leakage current of about 10(-12) A up to 30 V (gate voltage) comparable to all AlOx GI fabricated by atomic layer deposition (ALD). However, it had a high drain off-current (similar to 10(-8) A) with a low drain current, on-off ratio of similar to 10(-2) A due to the inductively coupled plasma (ICP) stream during the IPVD-GI process. In order to protect; an IGZO channel layer from the plasma effect., we deposited a shallow AlOx (10 nm) layer on the IGZO by using ALD. Using this double-layered GI, a high mobility transistor (30.95 cm(2)/sV) with a drain current on-off ratio of similar to 10(6) could be achieved.

引用

页码：473 / 477

页数：5

共 7 条

[1]

CHEONG WS, 2007, MRS 2007 FA IN PRESS

[2] Ionized physical vapor deposition (IPVD): A review of technology and applications [J].

Helmersson, Ulf ;

Lattemann, Martina ;

Bohlmark, Johan ;

Ehiasarian, Arutiun P. ;

Gudmundsson, Jon Tomas .

THIN SOLID FILMS, 2006, 513 (1-2) :1-24

[3] Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system [J].

Iwasaki, Tatsuya ;

Itagaki, Naho ;

Den, Tohru ;

Kumomi, Hideya ;

Nomura, Kenji ;

Kamiya, Toshio ;

Hosono, Hideo .

APPLIED PHYSICS LETTERS, 2007, 90 (24)

[4] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[5] Low-voltage-driven bottom-gate amorphous indium-gallium-zinc-oxide thin-film transistors with high dielectric constant oxide/polymer double-layer dielectric [J].

Noh, Joo Hyon ;

Kim, Chang Su ;

Ryu, Seung Yoon ;

Jo, Sung Jin .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (7A) :4096-4098

[6] Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors [J].

Suresh, Arun ;

Wellenius, Patrick ;

Dhawan, Anuj ;

Muth, John .

APPLIED PHYSICS LETTERS, 2007, 90 (12)

[7] High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering [J].

Yabuta, Hisato ;

Sano, Masafumi ;

Abe, Katsumi ;

Aiba, Toshiaki ;

Den, Tohru ;

Kumomi, Hideya ;

Nomura, Kenji ;

Kamiya, Toshio ;

Hosono, Hideo .

APPLIED PHYSICS LETTERS, 2006, 89 (11)

← 1 →