Interplay between thermodynamics and kinetics in the capping of InAs/GaAs(001) quantum dots

被引：122

作者：

Costantini, G. ^{[1
]}

Rastelli, A. ^{[1
]}

Manzano, C. ^{[1
]}

Acosta-Diaz, P. ^{[1
]}

Songmuang, R. ^{[1
]}

Katsaros, G. ^{[1
]}

Schmidt, O. G. ^{[1
]}

Kern, K. ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 96卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.96.226106

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A microscopic picture for the GaAs overgrowth of self-organized InAs/GaAs(001) quantum dots is developed. Scanning tunneling microscopy measurements reveal two capping regimes: the first being characterized by a dot shrinking and a backward pyramid-to-dome shape transition. This regime is governed by fast dynamics resulting in island morphologies close to thermodynamic equilibrium. The second regime is marked by a true overgrowth and is controlled by kinetically limited surface diffusion processes. A simple model is developed to describe the observed structural changes which are rationalized in terms of energetic minimization driven by lattice mismatch and alloying.

引用

页数：4

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