Lateral motion of SiGe islands driven by surface-mediated alloying

被引：85

作者：

Denker, U

Rastelli, A

Stoffel, M

Tersoff, J

Katsaros, G

Costantini, G

Kern, K

Jin-Phillipp, NY

Jesson, DE

Schmidt, OG

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] Monash Univ, Sch Phys & Mat Engn, Melbourne, Vic 3800, Australia

[3] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[4] Max Planck Inst Metallforsch, D-70569 Stuttgart, Germany

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 94卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.94.216103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

SiGe islands move laterally on a Si(001) substrate during in situ postgrowth annealing. This surprising behavior is revealed by an analysis of the substrate surface morphology after island removal using wet chemical etching. We explain the island motion by asymmetric surface-mediated alloying. Material leaves one side of the island by surface diffusion, and mixes with additional Si from the surrounding surface as it redeposits on the other side. Thus the island moves laterally while becoming larger and more dilute.

引用

页数：4

共 28 条

[1]

CARNS TK, 1995, J ELECTROCHEM SOC, V142, P1260, DOI 10.1149/1.2044161

[2] Strain-driven alloying in Ge/Si(100) coherent islands [J].