Dopant source choice for formation of p-type ZnO:: Li acceptor

被引：217

作者：

Zeng, YJ ^{[1
]}

Ye, ZZ ^{[1
]}

Xu, WZ ^{[1
]}

Li, DY ^{[1
]}

Lu, JG ^{[1
]}

Zhu, LP ^{[1
]}

Zhao, BH ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 06期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2172743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Li-doped, p-type ZnO thin films have been realized via dc reactive magnetron sputtering. An optimized result with a resistivity of 16.4 Omega cm, Hall mobility of 2.65 cm(2)/V s, and hole concentration of 1.44x10(17) cm(-3) was achieved, and electrically stable over a month. Hall-effect measurements supported by secondary ion mass spectroscopy indicated that the substrate temperature played a key role in optimizing the p-type conduction of Li-doped ZnO thin films. Furthermore, ZnO-based p-n homojunction was fabricated by deposition of a Li-doped p-type ZnO layer on an Al-doped n-type ZnO layer. (c) 2006 American Institute of Physics.

引用

页数：3

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