Long-range-ordered Ag nanodot arrays grown on GaAs substrate using nanoporous alumina mask

被引：8

作者：

Liu, Wen ^{[1
]}

Wang, Xiaodong ^{[1
]}

Xu, Rui ^{[1
]}

Wang, Xiaofeng ^{[1
]}

Cheng, Kaifang ^{[1
]}

Ma, Huili ^{[1
]}

Yang, Fuhua ^{[1
,2
]}

Li, Jinmin ^{[3
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Porous anodic alumina; GaAs; Ag nanodot arrays; ANODIC ALUMINA;

D O I：

10.1016/j.mssp.2012.05.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With more and more attention given to the plasmonic nanostructures enhancing light trapping of solar cells, the fabrication of metal nanostructures becomes more and more important. In this work, we fabricated porous anodic alumina on SiO2/GaAs substrate and obtained periodic Ag nanodots with hemispherical shape by electron beam evaporation. During the experiments, it was found that the properties of barrier layers of porous anodic alumina fabricated on SiO2/GaAs and SiO2/Si substrates after pore-widening are different. The through-hole porous anodic alumina film on SiO2/GaAs substrate cannot be obtained after a long pore-widening process. The additional Ar ion bombardment against the samples was needed in our experiments to get the through-hole porous anodic alumina films on SiO2/GaAs substrate. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：160 / 164

页数：5

共 10 条

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