Amphoteric nature of vacancies in zinc blende semiconductors

被引：11

作者：

Chadi, DJ ^{[1
]}

机构：

[1] NEC Corp Ltd, Lab Amer, Princeton, NJ 08540 USA

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2003年 / 6卷 / 5-6期

关键词：

vacancy; defects; II-VI semiconductors; III-V semiconductors;

D O I：

10.1016/j.mssp.2003.05.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We find that the donor-like properties of anion-site vacancies (and similarly the acceptor-like properties of cation-site vacancies) can be completely "inverted" through lattice relaxations leading to a dimerization of the dangling-bonds around a vacancy. On the basis of results obtained from first-principles total-energy calculations, we find that the amphoteric nature of anion-site vacancies plays an important role in dopant compensation and helps explain the difficulties encountered in the doping of some large band gap II-VI semiconductors. (C) 2003 Elsevier Ltd. All rights reserved.

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收藏

页码：281 / 284

页数：4

相关论文

共 16 条

[1] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1986, 33 (10) :7346-7348

[2] Inverted charge states of anion and cation-site vacancies in zincblende semiconductors: Theory [J].

Chadi, DJ .

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 :1321-1328

[3] SPECIAL POINTS IN BRILLOUIN ZONE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753

[4] COMPENSATION OF P-TYPE DOPING IN ZNSE - THE ROLE OF IMPURITY-NATIVE DEFECT COMPLEXES [J].

GARCIA, A ;

NORTHRUP, JE .

PHYSICAL REVIEW LETTERS, 1995, 74 (07) :1131-1134

[5] MOMENTUM-SPACE FORMALISM FOR THE TOTAL ENERGY OF SOLIDS [J].

IHM, J ;

ZUNGER, A ;

COHEN, ML .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (21) :4409-4422

[6]

KLEINMAN L, 1982, PHYS REV LETT, V48, P1424

[7] ENERGETICS OF THE AS VACANCY IN GAAS - THE STABILITY OF THE 3+ CHARGE-STATE [J].

NORTHRUP, JE ;

ZHANG, SB .

PHYSICAL REVIEW B, 1994, 50 (07) :4962-4964

[8] Orthorhombic symmetry DX centers in S-doped GaSb, GaAs, and AlxGa1-xAs [J].

Park, CH ;

Chadi, DJ .

PHYSICAL REVIEW B, 1996, 54 (20) :14246-14249

[9] MICROSCOPIC STRUCTURE OF DX-CENTERS OF COLUMN-III AND COLUMN-VII IMPURITIES IN CDTE [J].

PARK, CH ;

CHADI, DJ .

APPLIED PHYSICS LETTERS, 1995, 66 (23) :3167-3169

[10] Identification of the native vacancy defects in both sublattices of ZnSxSe1-x by positron annihilation [J].

Saarinen, K ;

Laine, T ;

Skog, K ;

Makinen, J ;

Hautojarvi, P ;

Rakennus, K ;

Uusimaa, P ;

Salokatve, A ;

Pessa, M .

PHYSICAL REVIEW LETTERS, 1996, 77 (16) :3407-3410