Sequential deposition of NbN/MgO film on Si(100) using pulsed KrF excimer laser deposition method with different ambiences

被引：7

作者：

Hiroshima, Y ^{[1
]}

Ishiguro, T ^{[1
]}

Kobayashi, T ^{[1
]}

机构：

[1] NAGAOKA UNIV TECHNOL,DEPT ELECT ENGN,NAGAOKA,NIIGATA 94021,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 07期

关键词：

pulsed laser deposition; PLD; laser ablation; KrF excimer laser; MgO thin film; NbN thin film; sequential deposition;

D O I：

10.1143/JJAP.35.4021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sequential formation of NbN/MgO bilayers on Si(100) using pulsed KrF excimer laser deposition with different ambiences of oxygen and nitrogen has been performed. The effects of nitrogen ambience on the NbN formation in this sequential process are examined. The deposited films are characterized by X-ray (Cu-K alpha) diffraction; X-ray photoelectron spectroscopy and measurement of the critical temperature of superconducting transition. The concentration of nitrogen in the NbN film increases with the ambient pressure up to 9 x 10(-2) Torr and superconducting transition is observed at similar to 12.7K. However, the plume distribution became broader with increasing Na gas pressure and non- negligible oxidation of the NbN films occurred. The reasons for the oxidation problem are related to the enhancement due to the multiple collisions between the ablated particles and oxygen impurity, which is mainly generated by resputtering from the surfaces of both the previously deposited MgO film substrate and its holder.

引用

页码：4021 / 4026

页数：6

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