A new field limit of silicon devices stressed at pulsed high fields is proposed, namely, the threshold field for the onset of the phase-shifted current response of the device. While the classical limit by the breakdown of the semiconductor-dielectric system, generally by surface flashover, causes a total damage of the semiconductor, the new limit prevents any damage of the device, even at high applied fields. Depending on the overall quality of the device under test, catastrophic failure of the device can be avoided even at large fields of similar to 70 kV/cm by not exceeding the threshold for the onset of the phase-shifted current response, the proposed new field limit. Beyond this limit the device response is unstable and a surface filament, distinctly different from the surface flashover tracks, may appear on the device surface, permanently degrading its quality. Experimental results are presented supporting the new predamage high-field limitation. Scanning electron microscopy and optical micrographs are presented for a clear description of the nature of the damage. The present results are discussed using a recent physical model of prebreakdown and breakdown phenomena in high-field semiconductor-dielectric systems [G. Gradinaru and T. S. Sudarshan, J. Appl. Phys. 73, 7643 (1993)]. (C) 1996 American Institute of Physics.