Development of an all-nitride magnetic tunnel junction

被引：10

作者：

Borsa, DM

Grachev, S

Kerssemakers, JWJ

Boerma, DO

机构：

[1] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands

[2] Vrije Univ Amsterdam, Fac Sci, Div Phys & Astron, NL-1081 HV Amsterdam, Netherlands

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 240卷 / 1-3期

关键词：

magnetic films; iron nitrides; MBE; thin films; epitaxial;

D O I：

10.1016/S0304-8853(01)00901-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We are developing an all-nitride magnetic tunnel junction. Here, we report on the growth and properties of gamma'-Fe4N, alpha"-Fe16N2 and Cu3N. Epitaxial gamma'-Fe4N films were grown by molecular beam epitaxy of iron in the presence of atomic nitrogen from an RF atomic source. Layers of Cu3N were grown in a similar fashion. The alpha"-Fe16N2 phase was synthesized by nitriding epitaxial iron layers. Up to now, Cu3N and alpha"-Fe16N2 were not obtained as pure phases. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：445 / 447

页数：3

共 8 条

[1] High-quality epitaxial iron nitride films grown by gas-assisted molecular-beam epitaxy [J].