Reversible Basal Plane Hydrogenation of Graphene

被引：481

作者：

Ryu, Sunmin ^{[1
]}

Han, Melinda Y. ^{[2
]}

Maultzsch, Janina ^{[3
,4
]}

Heinz, Tony F. ^{[3
,4
]}

Kim, Philip ^{[3
]}

Steigerwald, Michael L.

Brus, Louis E. ^{[1
]}

机构：

[1] Columbia Univ, Dept Chem, New York, NY 10027 USA

[2] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA

[3] Columbia Univ, Dept Phys, New York, NY 10027 USA

[4] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

来源：

NANO LETTERS | 2008年 / 8卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1021/nl802940s

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the chemical reaction of single-layer graphene with hydrogen atoms, generated in situ by electron-induced dissociation of hydrogen silsesquioxane (HSQ). Hydrogenation, forming sp(3) C-H functionality on the basal plane of graphene, proceeds at a higher rate for single than for double layers, demonstrating the enhanced chemical reactivity of single sheet graphene. The net H atom sticking probability on single layers at 300 K is at least 0.03, which exceeds that of double layers by at least a factor of 15. Chemisorbed hydrogen atoms, which give rise to a prominent Raman D band, can be detached by thermal annealing at 100 similar to 200 degrees C. The resulting dehydrogenated graphene is "activated" when photothermally heated it reversibly binds ambient oxygen, leading to hole doping of the graphene. This functionalization of graphene can be exploited to manipulate electronic and charge transport properties of graphene devices.

引用

页码：4597 / 4602

页数：6

共 41 条

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