Formation of different periodic nanostructures on semiconductors

被引：7

作者：

Ganeev, R. A. ^{[1
]}

机构：

[1] Uzbek Acad Sci, NPO Akadempribor, Tashkent 100125, Uzbekistan

来源：

OPTICS AND SPECTROSCOPY | 2009年 / 106卷 / 01期

关键词：

LASER; DAMAGE; INTERFERENCE; FABRICATION; SURFACES;

D O I：

10.1134/S0030400X09010196

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The interaction of femtosecond pulses with surfaces of semiconductors accompanied by the appearance of different nanostructures and nanoholes is studied. The formation of nanostructures was observed for semiconductors placed into different media. The effect of different parameters (angle of incidence, light polarization, number of shots, pulse duration, etc.) on the formation of the structures is analyzed. The period of the arising ordered structures could be either on the order of the light wavelength (700-800 nm) or much smaller (180 nm).

引用

页码：142 / 146

页数：5

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