Growth of thin Ti films on Si(111)-(7x7) surfaces

被引:6
作者
Saleh, AA
Peterson, LD
机构
[1] Physics Department, Montana State University, Bozeman
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1996年 / 14卷 / 01期
关键词
D O I
10.1116/1.579875
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A study of the room-temperature growth of ultrathin Ti films [up to 7 monolayers (ML)] on clean and atomically flat Si(111)-(7X7) surfaces using Auger electron spectroscopy and low-energy electron diffraction (LEED) is presented. The variations in the Auger signal due to Si L(2,3)VV with binding energy of 92 eV are used to model the growth morphology of this system. These measurements indicate the growth of an initial disordered and continuous Ti film of up to 1.6 ML in thickness where the LEED pattern completely disappears and the Si Auger signal is strongly attenuated. As more Ti is deposited, this is followed by the disintegration of the continuous film and the formation of an intermixed Ti/Si film. This is evidenced by a change in the slope of the Auger signal time plot, and the reappearance of the LEED pattern. The modification in the overlayer composition for films thicker than 1.6 ML is confirmed by a change in the Si L(2,3)VV Auger peak that resembles the peak shape due to TiSi2. (C) 1996 American Vacuum Society.
引用
收藏
页码:30 / 33
页数:4
相关论文
共 17 条
[1]  
[Anonymous], 1977, HELIUM STOPPING POWE
[2]   STRUCTURE AND GROWTH OF CRYSTALLINE SUPERLATTICES - FROM MONOLAYER TO SUPERLATTICE [J].
BAUER, E ;
VANDERMERWE, JH .
PHYSICAL REVIEW B, 1986, 33 (06) :3657-3671
[3]   CHEMICAL AND STRUCTURAL ASPECTS OF REACTION AT THE TI SI INTERFACE [J].
BUTZ, R ;
RUBLOFF, GW ;
TAN, TY ;
HO, PS .
PHYSICAL REVIEW B, 1984, 30 (10) :5421-5429
[4]   SI-METAL INTERFACE REACTION AND BULK ELECTRONIC-STRUCTURE OF SILICIDES [J].
FRANCIOSI, A ;
WEAVER, JH .
PHYSICA B & C, 1983, 117 (MAR) :846-847
[5]   KINETICS OF TISI2 FORMATION BY THIN TI FILMS ON SI [J].
HUNG, LS ;
GYULAI, J ;
MAYER, JW ;
LAU, SS ;
NICOLET, MA .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5076-5080
[6]  
IWAMI M, 1984, SOLID STATE COMMUN, V94, P459
[7]   FORMATION AND MICROSTRUCTURAL DEVELOPMENT OF TISI2 IN (111)SI BY TI ION-IMPLANTATION AND ANNEALING AT 950-DEGREES-C [J].
JIN, S ;
AINDOW, M ;
ZHANG, Z ;
CHEN, LJ .
JOURNAL OF MATERIALS RESEARCH, 1995, 10 (04) :891-899
[8]   THE SURFACE FREE-ENERGIES OF SOLID CHEMICAL-ELEMENTS - CALCULATION FROM INTERNAL FREE ENTHALPIES OF ATOMIZATION [J].
MEZEY, LZ ;
GIBER, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (11) :1569-1571
[9]   2-GRID AUGER-LOW ENERGY ELECTRON-DIFFRACTION SYSTEM [J].
NAMBA, Y ;
MORI, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :1884-1887
[10]   AES ANALYSIS OF THE GROWTH-MECHANISM OF METAL LAYERS ON METAL-SURFACES [J].
OSSICINI, S ;
MEMEO, R ;
CICCACCI, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (02) :387-391