Synthesis of alkyl-terminated silicon nanoclusters by a solution route

被引:279
作者
Yang, CS
Bley, RA
Kauzlarich, SM
Lee, HWH
Delgado, GR
机构
[1] Univ Calif Davis, Dept Chem, Davis, CA 95616 USA
[2] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
关键词
D O I
10.1021/ja9828509
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We describe the synthesis and characterization of alkyl-capped nanocrystalline Si ((R) over cap-n-Si) prepared by the reaction of SiCl(4) with Mg(2)Si in ethylene glycol dimethyl ether (glyme) and surface-terminated with various alkyl groups, (R) over cap-n-Si (R = methyl, ethyl, n-butyl, and n-octyl). This reaction produces crystalline nanoparticles with surfaces that can be chemically modified. The resultant crystalline nanoparticles can be suspended in organic solvents or isolated as a powder. The nanoclusters were characterized by transmission electron microscopy (TEM), high-resolution TEM, selected area electron diffraction (SAED), and Fourier transform infrared (FTIR) spectroscopy, electron paramagnetic resonance (EPR) spectroscopy, UV-vis absorption, and photoluminescence spectroscopy. The average cluster size depends on the reflux time of Mg2Si with SiCl(4), which provided nanoclusters with an average size bf 2-5 MI. HRTEM confirms the presence of crystalline nanoclusters, and SAED is consistent with diamond-structured silicon. FTIR spectra are consistent with alkyl surface termination and show very little or no evidence for oxygen on the surface of the nanoclusters, depending on the surface alkyl group. The alkyl termination can be removed by reaction in air at 450 degrees C, and a Si-O stretch is observed in the FTIR spectra: EPR spectroscopy is consistent with crystalline Si nanoclusters and shows no signal at 4 K. The optical absorption spectra show an absorption edge between 260 and 240 nm, depending on the surface alkyl group, while a strong UV-blue photoluminescence between 315 and 520 nm is observed.
引用
收藏
页码:5191 / 5195
页数:5
相关论文
共 41 条
  • [21] A STRAIGHTFORWARD, NEW METHOD FOR THE SYNTHESIS OF NANOCRYSTALLINE GAAS AND GAP
    KHER, SS
    WELLS, RL
    [J]. CHEMISTRY OF MATERIALS, 1994, 6 (11) : 2056 - 2062
  • [22] PHOTOLUMINESCENCE STUDIES OF POROUS SILICON-CARBIDE
    KONSTANTINOV, AO
    HENRY, A
    HARRIS, CI
    JANZEN, E
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (17) : 2250 - 2252
  • [23] Activation of blue emission from oxidized porous silicon by annealing in water vapor
    Koyama, H
    Matsushita, Y
    Koshida, N
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (03) : 1776 - 1778
  • [24] LEE HS, UNPUB
  • [25] MAGNESIUM SILICIDE INTERMETALLIC ALLOYS
    LI, GH
    GILL, HS
    VARIN, RA
    [J]. METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1993, 24 (11): : 2383 - 2391
  • [26] IDENTIFICATION OF INFRARED-ABSORPTION PEAKS OF AMORPHOUS SILICON-CARBON ALLOY BY THERMAL ANNEALING
    LIN, WL
    TSAI, HK
    LEE, SC
    SAH, WJ
    TZENG, WJ
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (25) : 2112 - 2114
  • [27] ALKYL MONOLAYERS ON SILICON PREPARED FROM 1-ALKENES AND HYDROGEN-TERMINATED SILICON
    LINFORD, MR
    FENTER, P
    EISENBERGER, PM
    CHIDSEY, CED
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1995, 117 (11) : 3145 - 3155
  • [28] A LUMINESCENT SILICON NANOCRYSTAL COLLOID VIA A HIGH-TEMPERATURE AEROSOL REACTION
    LITTAU, KA
    SZAJOWSKI, PJ
    MULLER, AJ
    KORTAN, AR
    BRUS, LE
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (06) : 1224 - 1230
  • [29] Socrates G., 1980, INFRARED CHARACTERIS
  • [30] SEMICONDUCTOR CRYSTALLITES - A CLASS OF LARGE MOLECULES
    STEIGERWALD, ML
    BRUS, LE
    [J]. ACCOUNTS OF CHEMICAL RESEARCH, 1990, 23 (06) : 183 - 188