One transistor ferroelectric memory with Pt/Pb5Ge3O11/Ir/Poly-Si/SiO2/Si gate stack

被引：22

作者：

Li, T ^{[1
]}

Hsu, ST ^{[1
]}

Ulrich, BD ^{[1
]}

Stecker, L ^{[1
]}

Evans, DR ^{[1
]}

Lee, JJ ^{[1
]}

机构：

[1] Amer Inc, Sharp Lab, Camas, WA 98607 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 06期

关键词：

ferroelectric; memory; MOCVD; Pb5Ge3O11;

D O I：

10.1109/LED.2002.1004228

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One transistor ferroelectric nonvolatile memory with gate stack of Pt/Pb5Ge3O11/Ir/Poly-Si/SiO2/Si was successfully fabricated. This device features a saturated memory window of 3 V at a programming voltage of higher than 3 V from CV and IV measurements. The memory window decays rapidly within 10 seconds after programming, but remains stable at I V for up to 100 h. The "on" and "off" state currents are greater than 10 muA/mum and less 0.01 pA/mum, respectively, at a drain voltage of 0.1 V.

引用

页码：339 / 341

页数：3

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