Stack gate PZT/Al2O3 one transistor ferroelectric memory

被引：66

作者：

Chin, A ^{[1
]}

Yang, MY

Sun, CL

Chen, SY

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 07期

关键词：

Al2O3; ferroelectric; memory; PZT;

D O I：

10.1109/55.930683

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed single transistor ferroelectric memory using stack gate PZT/Al2O3 structure. For the same similar to 40 Angstrom dielectric thickness, the PZT/Al2O3/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO2/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state, The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time.

引用

页码：336 / 338

页数：3

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