Growth and polarization features of highly (100) oriented Pb(Zr0.53Ti0.47)O3 films on Si with ultrathin SiO2 buffer layer

被引：43

作者：

Lin, Y

Zhao, BR

Peng, HB

Xu, B

Chen, H

Wu, F

Tao, HJ

Zhao, ZX

Chen, JS

机构：

[1] Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

[3] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 19期

关键词：

D O I：

10.1063/1.122589

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly (100) oriented Pb(Zr0.53Ti0.47)O-3 (PZT) films were prepared on Si substrates with ultrathin SiO2 buffer layer by pulsed laser deposition. Hysteresis measurements show that saturation polarization, remnant polarization and coercive field of the films reach 26 mu C/cm(2),10 mu C/cm(2) and 70 kV/cm, respectively. The thickness of SiO2 buffer layer is found to play a significant role on phase purity and orientation of PZT as well as the prevention of interdiffusion. It is also found that the grain size and the interdiffusion between PZT and Si are the key factors for the ferroelectric properties of the films, which are discussed together with the synthesis condition in detail. (C) 1998 American Institute of Physics. [S0003-6951(98)01245-5].

引用

页码：2781 / 2783

页数：3

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