OBSERVATION OF A DISTRIBUTED EPITAXIAL OXIDE IN THERMALLY GROWN SIO2 ON SI(001)

被引：40

作者：

MUNKHOLM, A ^{[1
]}

BRENNAN, S ^{[1
]}

COMIN, F ^{[1
]}

ORTEGA, L ^{[1
]}

机构：

[1] EUROPEAN SYNCHROTRON RADIAT FACIL,F-38043 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.75.4254

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present direct evidence of an ordered oxide which is epitaxially related to the underlying Si(001) substrate and is distributed throughout thermally grown oxide films with thicknesses between 80 and 1000 Angstrom. This evidence consists of diffraction peaks at the [1,1,0.45] positions. For films with thickness in the range 80-160 Angstrom the integrated intensity of these diffraction peaks increases roughly linearly and the ordered oxide grain size parallel to the surface is constant at 130 Angstrom.

引用

页码：4254 / 4257

页数：4

共 13 条

[1] SCATTERING OF X-RAYS FROM CRYSTAL-SURFACES
ANDREWS, SR
COWLEY, RA
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (35): : 6427 - 6439
[2] X-RAY-SCATTERING STUDIES OF THE SI-SIO2 INTERFACE
FUOSS, PH
NORTON, LJ
BRENNAN, S
FISCHERCOLBRIE, A
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (07) : 600 - 603
[3] OXIDATION OF SILICON
MOTT, NF
RIGO, S
ROCHET, F
STONEHAM, AM
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1989, 60 (02): : 189 - 212
[4] SI-]SIO2 TRANSFORMATION - INTERFACIAL STRUCTURE AND MECHANISM
OURMAZD, A
TAYLOR, DW
RENTSCHLER, JA
BEVK, J
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (02) : 213 - 216
[5] X-RAY REFLECTIVITY STUDIES OF SIO2/SI(001)
RABEDEAU, TA
TIDSWELL, IM
PERSHAN, PS
BEVK, J
FREER, BS
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (26) : 3422 - 3424
[6] RABEDEAU TA, 1991, APPL PHYS LETT, V59, P6
[7] APPARATUS FOR 3D SURFACE X-RAY-SCATTERING DURING IN-SITU MOLECULAR-BEAM DEPOSITION
RENAUD, G
VILLETTE, B
GUENARD, P
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 95 (03) : 422 - 430
[8] NATIVE OXIDATION OF THE SI(001) SURFACE - EVIDENCE FOR AN INTERFACIAL PHASE
RENAUD, G
FUOSS, PH
OURMAZD, A
BEVK, J
FREER, BS
HAHN, PO
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (10) : 1044 - 1046
[9] CRYSTAL TRUNCATION RODS AND SURFACE-ROUGHNESS
ROBINSON, IK
[J]. PHYSICAL REVIEW B, 1986, 33 (06): : 3830 - 3836
[10] THE THERMAL-OXIDATION OF SILICON - THE SPECIAL CASE OF THE GROWTH OF VERY THIN-FILMS
ROCHET, F
RIGO, S
FROMENT, M
DANTERROCHES, C
MAILLOT, C
ROULET, H
DUFOUR, G
[J]. ADVANCES IN PHYSICS, 1986, 35 (03) : 237 - 274

← 1 2 →