X-RAY REFLECTIVITY STUDIES OF SIO2/SI(001)

X-ray reflectivity has been utilized in a study of the SiO2/Si interfacial structure for dry oxides grown at room temperature on highly ordered Si(001) surfaces. Scattering near (+/- 110) demonstrates the Si lattice termination of the wafers studied is characterized by a highly ordered array of terraces separated by monoatomic steps. Specular reflectivity data indicate the "native" dry oxide thickness is approximately 5 angstrom with a 1-angstrom vacuum interface width. Residual laminar order in the oxide electron density along the oxide/Si interfacial normal decays exponentially from the oxide/Si interface with a approximately 2.7-angstrom decay length.