Effective carrier density in porous silicon carbide

被引：18

作者：

Ivanov, PA

Mynbaeva, MG

Saddow, SE

机构：

[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[2] Univ S Florida, Dept Elect Engn, Tampa, FL 33620 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 03期

关键词：

D O I：

10.1088/0268-1242/19/3/005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effective carrier density in porous silicon carbide is measured to be 40 times less than that in the starting material. An idea is proposed which relates the reduction in carrier density to some compensation effect. It is proposed that donor dopants are compensated by deep-level surface-localized, acceptor-like states appearing due to the large internal surface area developed as a result of pore formation in crystalline SiC. The estimated density of trapped electrons per unit internal surface area, 5 x 10(12) cm(-2), is quite reasonable for the density of deep-level states at the SiC surface.

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收藏

页码：319 / 322

页数：4

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