Intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots

被引：13

作者：

Chen, ZH ^{[1
]}

Kim, ET

Madhukar, A

机构：

[1] Univ So Calif, Dept Mat Sci, Nanostruct Mat & Devices Lab, Los Angeles, CA 90089 USA

[2] Univ So Calif, Dept Phys, Nanostruct Mat & Devices Lab, Los Angeles, CA 90089 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 15期

关键词：

D O I：

10.1063/1.1468896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present experimental evidence for the existence and directionality of dipoles induced by intraband transitions from the electron ground states to high, bound excited states in self-assembled InAs/GaAs quantum dots (QDs). Moreover, the orientation of the interband transition induced dipoles is also determined for the same QDs. The findings indicate the potential use of intraband dipoles in asymmetric QDs in proposed quantum gates. (C) 2002 American Institute of Physics.

引用

页码：2770 / 2772

页数：3

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