Properties of transparent conductive ZnO:Al thin films prepared by magnetron sputtering

被引：33

作者：

Fu, EG ^{[1
]}

Zhuang, DM

Zhang, G

Ming, Z

Yang, WF

Liu, JJ

机构：

[1] Tsinghua Univ, Dept Engn Mech, Beijing 100084, Peoples R China

[2] Univ Hong Kong, Dept Phys, Pokfulam, Peoples R China

[3] Kingland Grp, Zhengzhou 313000, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2004年 / 35卷 / 04期

关键词：

sputtering; ZnO : Al thin films; substrate temperature; argon gas pressure; resistivity; transmittance;

D O I：

10.1016/s0026-2692(03)00251-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Middle-frequency alternative magnetron sputtering was used to deposit transparent conductive ZAO (ZnO:Al) thin films with ZAO (98 wt%ZnO + 2 wt%Al2O3) ceramic target on glass and Si wafers. The influences of the various deposition parameters on the structural, optical and electrical performances of ZAO films have been studied. The structural characteristics of the films were investigated by the X-ray diffractometer and atomic force microscope, while the visible transmittance, carrier concentration and Hall mobility were studied by UV-VIS and the Hall tester, respectively. The lowest resistivity obtained in the work was 4.6 x 10(-4) Omega cm for the film with average transmittance of 90.0% within the visible wavelength range and sheet resistance of 32 Omega, which was deposited at 250 degreesC and 0.8 Pa. (C) 2003 Published by Elsevier Ltd.

引用

页码：383 / 387

页数：5

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