Performance of the Raith 150 electron-beam lithography system

被引:27
作者
Goodberlet, JG [1 ]
Hastings, JT [1 ]
Smith, HI [1 ]
机构
[1] MIT, Elect Res Lab, Cambridge, MA 02139 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 06期
关键词
D O I
10.1116/1.1414018
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The performance of a Raith 150 electron-beam lithography system is reported. The system's resolution, stability, intrafield distortion, stitching, and overlay performance are evaluated. Patterning at low- and high-acceleration voltages is compared. The system was used to pattern sub-20 nm features, and the largest intrafield distortion for a 100 mum field was measured to be 15 nm. Pattern-placement accuracy below 35 nm, mean plus twice the standard deviation, was demonstrated. (C) 2001 American Vacuum Society.
引用
收藏
页码:2499 / 2503
页数:5
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