Wide-gap semiconductors for high-power electronics

被引：52

作者：

Lebedev, AA ^{[1
]}

Chelnokov, VE ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 09期

关键词：

D O I：

10.1134/1.1187823

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The latest results obtained in the development of high-power devices based on wide-gap semiconductors are examined. It is shown that at present silicon carbide remains the most promising material for high-temperature, radiation-resistant, high-power electronics. Certain factors involving a wide commercial adoption of SiC-based devices are examined. (C) 1999 American Institute of Physics. [S1063- 7826(99)01809-8].

引用

页码：999 / 1001

页数：3

共 26 条

[1] 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's) [J].

Agarwal, AK ;

Casady, JB ;

Rowland, LB ;

Seshadri, S ;

Siergiej, RR ;

Valek, WF ;

Brandt, CD .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (11) :518-520

[2] SEMICONDUCTORS FOR HIGH-VOLTAGE, VERTICAL CHANNEL FIELD-EFFECT TRANSISTORS [J].

BALIGA, BJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1759-1764

[3]

BRYLINSKII C, 1998, 2 EUR C SIC REL MAT, P45

[4]

CARTER CH, 1998, 2 EUR C SIL CARB REL, P1

[5] Recent advances in SiC power devices [J].

Cooper, JA ;

Melloch, MR ;

Woodall, JM ;

Spitz, J ;

Schoen, KJ ;

Henning, JP .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :895-900

[6]

DMITRIEV V, 1998, 2 EUR C SIC REL MAT, P251

[7] Electron transport in AlGaN-GaN heterostructures grown on 6H-SiC substrates [J].

Gaska, R ;

Yang, JW ;

Osinsky, A ;

Chen, Q ;

Khan, MA ;

Orlov, AO ;

Snider, GL ;

Shur, MS .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :707-709

[8] High-temperature performance of AlGaN/GaN HFET's on SiC substrates [J].

Gaska, R ;

Chen, Q ;

Yang, J ;

Osinsky, A ;

Khan, MA ;

Shur, MS .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (10) :492-494

[9]

HENISCH H, 1972, SILICON CARBIDE, P17

[10]

JOHNSON EO, 1965, RCA REV, V26, P163

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