Chlorine doping of cubic CdS and ZnS grown by compound source molecular-beam epitaxy

被引：23

作者：

Grün, M

Storzum, A

Hetterich, M

Kamilli, A

Send, W

Walter, T

Klingshirn, C

机构：

[1] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany

[2] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

doping; CdS; ZnS; molecular-beam epitaxy; Cl;

D O I：

10.1016/S0022-0248(98)01375-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the chlorine doping of ZnS and CdS grown by compound source molecular-beam epitaxy. The maximum free electron concentrations achieved were 1 x 10(18) and 8 x 10(19) cm(-3), respectively. The conductivity of the cubic CdS epilayers turned out to be anisotropic with respect to the [110] crystallographic directions due to an anisotropic lattice defect structure. (C) 1999 Elsevier Science B.V. All rights reserved.

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页码：457 / 460

页数：4

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