Selective epitaxial growth of graphene on SiC

被引：48

作者：

Camara, N. ^{[1
]}

Rius, G. ^{[1
]}

Huntzinger, J. -R. ^{[2
]}

Tiberj, A. ^{[2
]}

Mestres, N. ^{[3
]}

Godignon, P. ^{[1
]}

Camassel, J. ^{[2
]}

机构：

[1] CSIC, IMB, CNM, Barcelona 08193, Spain

[2] Univ Montpellier 2, CNRS, GES, UMR 5650, F-34095 Montpellier 5, France

[3] CSIC, ICMAB, Barcelona 08193, Spain

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

关键词：

D O I：

10.1063/1.2988645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a method of selective epitaxial growth of few layers graphene (FLG) on a "prepatterned" silicon carbide (SiC) substrate. The methods involves, successively, the sputtering of a thin aluminium nitride (AlN) layer on top of a monocrystalline SiC substrate and, then, patterning it with e-beam lithography and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at similar to 1582 cm(-1) in the AlN-free areas is used to validate the concept. It gives absolute evidence of selective FLG growth. (C) 2008 American Institute of Physics.

引用

页数：3

共 22 条

[1] Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].

Berger, C ;

Song, ZM ;

Li, TB ;

Li, XB ;

Ogbazghi, AY ;

Feng, R ;

Dai, ZT ;

Marchenkov, AN ;

Conrad, EH ;

First, PN ;

de Heer, WA .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916

[2] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[3] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[4] Epitaxial graphene [J].

de Heer, Walt A. ;

Berger, Claire ;

Wu, Xiaosong ;

First, Phillip N. ;

Conrad, Edward H. ;

Li, Xuebin ;

Li, Tianbo ;

Sprinkle, Michael ;

Hass, Joanna ;

Sadowski, Marcin L. ;

Potemski, Marek ;

Martinez, Gerard .

SOLID STATE COMMUNICATIONS, 2007, 143 (1-2) :92-100

[5] A comparison of the AIN annealing cap for 4H-SiC annealed in nitrogen versus argon atmosphere [J].

Derenge, MA ;

Jones, KA ;

Kirchner, KW ;

Ervin, MH ;

Zheleva, TS ;

Hullavarad, S ;

Vispute, RD .

SOLID-STATE ELECTRONICS, 2004, 48 (10-11) :1867-1872

[6] Few-layer graphene on SiC, pyrolitic graphite, and graphene:: A Raman scattering study [J].

Faugeras, C. ;

Nerriere, A. ;

Potemski, M. ;

Mahmood, A. ;

Dujardin, E. ;

Berger, C. ;

de Heer, W. A. .

APPLIED PHYSICS LETTERS, 2008, 92 (01)

[7] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[8] Heteroepitaxial graphite on 6H-SiC(0001):: Interface formation through conduction-band electronic structure [J].

Forbeaux, I ;

Themlin, JM ;

Debever, JM .

PHYSICAL REVIEW B, 1998, 58 (24) :16396-16406

[9] Structural properties of the multilayer graphene/4H-SiC(000(1) overbar) system as determined by surface x-ray diffraction [J].

Hass, J. ;

Feng, R. ;

Millan-Otoya, J. E. ;

Li, X. ;

Sprinkle, M. ;

First, P. N. ;

de Heer, W. A. ;

Conrad, E. H. ;

Berger, C. .

PHYSICAL REVIEW B, 2007, 75 (21)

[10]

HUNTZINGER JR, 2008, NANOSPAIN, P41107

← 1 2 3 →